Description
High current HEXFET with a low on resistance for efficient use in a small package.
Specification:
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Configuration | Single |
| Max Continuous Drain Current | |
| Max Drain Source Resistance | 0.005Ω |
| Max Drain Source Voltage | 100V |
| Max Gate Source Voltage | ±20V |
| Max Operating Temperature | +175°C |
| Min Operating Temperature | -55°C |
| Mounting | Through Hole |
| No of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 78nS |
| Typical Turn-On Delay Time | 25nS |



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