Description
High current MOSFET with a low on resistance for efficient use in a small package.
Specification
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Max Continuous Drain Current | 35A |
| Max Drain Source Resistance | 0.045Ω |
| Max Drain Source Voltage | 100V |
| Max Gate Source Voltage | ±20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mounting | Through Hole |
| No of Elements per Chip | 1 |
| Height(mm) | 9.15 |
| Length(mm) | 10.4 |
| Width(mm) | 4.6 |
| Typical Fall Time | 10nS |
| Typical Rise Time | 40nS |
| Typical Turn-Off Delay Time | 45nS |
| Typical Turn-On Delay Time | 15nS |



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